, o ne. 20 stern a springfiel u.s.a. ye. d, new jersey 07081 bipolar power pnp low dropout regulator transistor the MJE1123 is an applications specific device designed to provide low-dropou inear regulation for switching-regulator post regulators, battery powered systems and other applications. the MJE1123 is fully specf ed in the saturation region and exhibits the following main features: ? high gain limits base-drive losses to only 1-2% of circuit output current ? gain is 100 minimum at iq = 1 .0 amp, vce = 7-0 volts ? excellent saturation voltage characteristic, 0.2 volts maximum at 1 .0 amp maximum ratings (tc = 25c unless otherwise noted.) rating collector-emitter sustaining voltage collector-base voltage emitter-base voltage collector current ? continuous ? peak base current ? continuous total power dissipation @ tc = 25c derate above 25c operating and storage temperature symbol vceo vcb veb "c 'cm ib pd tj. tstg value 40 50 5.0 4.0 8.0 4.0 75 0.6 -65to+150 unit vdc vdc vdc adc adc watts w/c c thermal characteristics thermal resistance ? junction to case ? junction to ambient maximum lead temperature for soldering purposes: 1/8" from case for 5 seconds rejc rgja tl 1.67 70 275 c/w c MJE1123 pnp low dropout transistor 4.0 amperes 40 volts in lli to-220ab electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics* collector-emitter sustaining voltage (|q = 1 .0 ma, i = 0) emitter-base voltage (ie = 100 ua) collector cutoff current (vce = 7- vdc> ib = ) (vce = 20 vdc. ib = o) vceo(sus) vebo 'ceo 40 7,0 ? 65 11 ? ? 100 250 vdc vdc jjadc on characteristics* collector-emitter saturation voltage (lc = 1 .0 adc, ib = 20 madc) (ic = 1-0 adc, ib = 50 madc) (ic = 1.0 adc, ib = 120 madc) (1c = 2.0 adc, ib = 50 madc) (1c =2.0 adc, |b = 120 madc) (1c =4.0 adc, ib = 120 madc) vce(sat) ? ? ? ? ? ? 0.16 0.13 0.10 0.25 0.20 0.45 0.30 0.25 0.20 0.40 0.35 0.75 vdc ' indicates pulse test: pulse width = 300 us max, duty cycle = 2%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets nre current before placing orders. quality semi-conductors
MJE1123 electrical characteristics ? continued (tc = 25"c unless otherwise noted) characteristic symbol min typ max unit on characteristics* (continued) base-emitter saturation voltage (lc = 1 .0 adc, ib = 20 madc) oc = 2.0 adc, ib = 50 madc) (lc = 4.0adc, |b = 120 madc) dc current gain (ic = 1.0 adc, vce = 7.0 vdc) (1c = 1 -0 adc, vce = 1 0 vdc) (1c = 2.0 adc, vce = 7.0 vdc) (1c = 2.0 adc, vce = 10 vdc) (1c = 4.0 adc, vce = 7.0 vdc) (1c =4.0 adc, vce = 10 vdc) base-emitter on voltage (lc = 1.0 adc, vce = 1.0 vdc) (1c = 2.0 adc, vce = 1.0 vdc) (1c =4.0 adc, vce = 1.0 vdc) vbe(sat) hfe vbe(on) ? ? ? 100 100 75 80 45 45 ? ? ? 0.77 0.87 1.00 170 180 120 140 75 79 0.75 0.84 0.90 0.95 1.20 1.40 225 225 170 180 100 100 0.90 1.00 1.20 vdc ? vdc dynamic characteristics current-gain ? bandwidth product (1c = 1 .0 adc, vce = 4.0 vdc, f = 1 .0 mhz)
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